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PDF IRF2804S-7P Data sheet ( Hoja de datos )
| Número de pieza | IRF2804S-7P | |
| Descripción | AUTOMOTIVE MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96891
AUTOMOTIVE MOSFET
IRF2804S-7P
Features
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance
l 175°C Operating Temperature
VDSS = 40V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
RDS(on) = 1.6mΩ
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
Absolute Maximum Ratings
S
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
ID = 160A
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
320
230
160
1360
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
Max.
Units
jRθJC
Junction-to-Case
––– 0.50 °C/W
RθCS
RθJA
RθJA
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient
ijJunction-to-Ambient (PCB Mount, steady state)
0.50
–––
–––
–––
62
40
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
9/6/04
1 page  
IRF2804S-7P
350
300
250
200
150
100
50
0
25
LIMITED BY PACKAGE
50 75 100 125 150
TC , Case Temperature (°C)
175
2.0
ID = 160A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
τCτ
Ri (°C/W) τi (sec)
0.1951 0.000743
0.3050 0.008219
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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| PDF Descargar | [ Datasheet IRF2804S-7P.PDF ] | |
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