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IRF2804S の電気的特性と機能

IRF2804SのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF2804S
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF2804S Datasheet, IRF2804S PDF,ピン配置, 機能
PD - 94436C
AUTOMOTIVE MOSFET
IRF2804
IRF2804S
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
IRF2804L
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 2.0m‰
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
S ID = 75A
TO-220AB
IRF2804
D2Pak
IRF2804S
TO-262
IRF2804L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
280
200
75
1080
330
2.2
± 20
670
1160
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/27/03

1 Page





IRF2804S pdf, ピン配列
IRF2804/S/L
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10000
1000
TOP
TOP
VV1GG5VSS
151V0V
108V.0V
8.70.V0V
76.0.V0V
65.0.V5V
55.5.V0V
BOTTOM 54.05V
BOTTOM 4.5V
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
10
0.1
4.5V
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
TJ = 175°C
100
TJ = 25°C
10
1
4.0
VDS = 10V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
300
250
200
150
100
50
0
0
TJ = 25°C
TJ = 175°C
VDS = 10V
20µs PULSE WIDTH
40 80 120 160
ID, Drain-to-Source Current (A)
200
Fig 3. Typical Transfer Characteristics
www.irf.com
Fig 4. Typical Forward Transconductance
vs. Drain Current
3


3Pages


IRF2804S 電子部品, 半導体
IRF2804/S/L
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
QG
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1600
1200
ID
TOP
31A
53A
BOTTOM 75A
800
400
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
www.irf.com

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRF2804

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF2804

HEXFET Power MOSFET

FreesCale Electronics
FreesCale Electronics
IRF2804L

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF2804L

HEXFET Power MOSFET

FreesCale Electronics
FreesCale Electronics


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