DataSheet.jp

IRF250 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF250
部品説明 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 



Total 7 pages
		

No Preview Available !

IRF250 Datasheet, IRF250 PDF,ピン配置, 機能
Data Sheet
IRF250
March 1999 File Number 1825.3
30A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.
Formerly developmental type TA09295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF250
TO-204AE
IRF250
NOTE: When ordering, include the entire part number.
Features
• 30A, 200V
• rDS(ON) = 0.085
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





ページ 合計 : 7 ページ
PDF
ダウンロード
[ IRF250.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRF250

N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
IRF250

N-CHANNEL POWER MOSFET

Seme LAB
Seme LAB
IRF250

30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET

Intersil Corporation
Intersil Corporation
IRF250

N-Channel MOSFET Transistor

Inchange Semiconductor
Inchange Semiconductor

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap