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IRF250 の電気的特性と機能

IRF250のメーカーはIntersil Corporationです、この部品の機能は「30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF250
部品説明 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF250 Datasheet, IRF250 PDF,ピン配置, 機能
Data Sheet
IRF250
March 1999 File Number 1825.3
30A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.
Formerly developmental type TA09295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF250
TO-204AE
IRF250
NOTE: When ordering, include the entire part number.
Features
• 30A, 200V
• rDS(ON) = 0.085
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 Page





IRF250 pdf, ピン配列
IRF250
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN TYP
--
--
MAX
30
120
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
TJ = 25oC, ISD = 30A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 30A, dISD/dt = 100A/µs
--
140 350
1.8 4.7
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 1.5mH, RG = 25, peak IAS = 30A. See Figures 15 and 16.
2.0
630
8.1
V
ns
µC
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
32
24
16
8
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
10-2
0.02
0.01
10-3
10-5
SINGLE PULSE
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
PDM
t1
t2t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
3


3Pages


IRF250 電子部品, 半導体
Test Circuits and Waveforms
IRF250
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
RL
+
RG
VDD
-
DUT
VGS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50k
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
6
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
0
Qg(TOT)
Qgd
VGS
VDS
Ig(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS

6 Page



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共有リンク

Link :


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