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IRF250 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF250
部品説明 N-CHANNEL POWER MOSFET
メーカ Seme LAB
ロゴ Seme LAB ロゴ 



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IRF250 Datasheet, IRF250 PDF,ピン配置, 機能
IRF250
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
200V
30A
0.085
1
20.32 (0.800)
18.80 (0.740)
dia.
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
1.57 (0.062)
1.47 (0.058)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
30A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
19A
IDM Pulsed Drain Current 1
120A
PD Power Dissipation @ Tcase = 25°C
150W
Linear Derating Factor
1.2W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 2
Repetitive Avalanche Energy 2
Peak Diode Recovery 3
200mJ
30A
15mJ
5V/ns
TJ , Tstg
TL
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
–55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%.
2) @ VDD = 50V , L 330mH , RG = 25, Peak IL = 30A , Starting TJ = 25°C.
3) @ ISD 30A , di/dt 190A/µs , VDD BVDSS , TJ 150°C , Suggested RG = 2.35
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96

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