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IRF1404 の電気的特性と機能

IRF1404のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1404
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1404 Datasheet, IRF1404 PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Automotive Qualified (Q101)
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications including
automotive.
The TO-220 package is universally preferred for all
automotive-commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-91896F
IRF1404
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004
S ID = 202A†
TO-220AB
Max.
202†
143†
808
333
2.2
± 20
620
See Fig.12a, 12b, 15, 16
1.5
-55 to + 175
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/10/03

1 Page





IRF1404 pdf, ピン配列
IRF1404
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10 4.5V
20µs PULSE WIDTH
1 TJ = 25 °C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
20µs PULSE WIDTH
1 TJ = 175°C
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
10
4 5 6 7 8 9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.5 ID = 202A
2.0
1.5
1.0
0.5
0.0 VGS= 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF1404 電子部品, 半導体
IRF1404
15V 1500
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
1200
900
600
300
ID
TOP
49A
101A
BOTTOM 121A
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
3.0
ID = -250µA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

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共有リンク

Link :


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