|
|
IRF1302SのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)」です。 |
部品番号 | IRF1302S |
| |
部品説明 | Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF1302Sダウンロード(pdfファイル)リンクがあります。 Total 11 pages
PD - 94520
AUTOMOTIVE MOSFET
IRF1302S
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
IRF1302L
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 4.0mΩ
ID = 174A
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
D2Pak
IRF1302S
TO-262
IRF1302L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
174
120
700
200
1.4
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
www.irf.com
1
07/16/02
1 Page IRF1302S/IRF1302L
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
2.0
ID = 174A
1.5
1.0
10.00
4.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF1302S/IRF1302L
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
700
ID
TOP 43A
74A
560 BOTTOM 104A
420
280
140
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
3.0
ID = 250µA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
|
PDF ダウンロード | [ IRF1302S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRF1302 | Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A) | International Rectifier |
IRF1302L | Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A) | International Rectifier |
IRF1302S | Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A) | International Rectifier |