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IRF1302S の電気的特性と機能

IRF1302SのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1302S
部品説明 Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1302S Datasheet, IRF1302S PDF,ピン配置, 機能
PD - 94520
AUTOMOTIVE MOSFET
IRF1302S
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRF1302L
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 4.0m
ID = 174A†
S
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFET utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
D2Pak
IRF1302S
TO-262
IRF1302L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
174†
120†
700
200
1.4
± 20
350
See Fig.12a, 12b, 15, 16
TBD
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)ˆ
Typ.
–––
–––
Max.
0.74
40
Units
°C/W
www.irf.com
1
07/16/02

1 Page





IRF1302S pdf, ピン配列
IRF1302S/IRF1302L
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
10000
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
1
0.1
4.5V
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
2.0
ID = 174A
1.5
1.0
10.00
4.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
5.0 6.0
VGS, Gate-to-Source Voltage (V)
7.0
Fig 3. Typical Transfer Characteristics
www.irf.com
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF1302S 電子部品, 半導体
IRF1302S/IRF1302L
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
700
ID
TOP 43A
74A
560 BOTTOM 104A
420
280
140
0
25 50 75 100 125 150
Starting Tj, Junction Temperature
( ° C)
175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
4.0
3.0
ID = 250µA
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
www.irf.com

6 Page



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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF1302

Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

International Rectifier
International Rectifier
IRF1302L

Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

International Rectifier
International Rectifier
IRF1302S

Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

International Rectifier
International Rectifier


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