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IRF121 の電気的特性と機能

IRF121のメーカーはIntersil Corporationです、この部品の機能は「8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF121
部品説明 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs
メーカ Intersil Corporation
ロゴ Intersil Corporation ロゴ 




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IRF121 Datasheet, IRF121 PDF,ピン配置, 機能
Semiconductor
October 1997
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Features
• 8.0A and 9.2A, 80V and 100V
• rDS(ON) = 0.27and 0.36
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF120
TO-204AA
IRF120
IRF121
TO-204AA
IRF121
IRF122
TO-204AA
IRF122
IRF123
TO-204AA
IRF123
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
2-1
File Number 1565.2

1 Page





IRF121 pdf, ピン配列
IRF120, IRF121, IRF122, IRF123
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11)
- 350 -
- 130 -
CRSS
- 36 -
LD Measured Between the Modified MOSFET
- 5.0 -
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Device
Source and Gate Pins and Inductances
the Center of Die
D
pF
pF
pF
nH
Internal Source Inductance
LS Measured From the
Source Lead, 6mm
(0.25in) From the Flange G
and the Source Bonding
Pad
LD
- 12.5 -
nH
LS
S
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Free Air Operation
- - 2.5 oC/W
- - 30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
D
G
MIN TYP MAX UNITS
-
- 8.0
A
-
- 32
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs
- - 2.5
55 110 240
0.25 0.53 1.10
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 640µH, RG = 25Ω, peak IAS= 9.2A (Figures 15, 16).
V
ns
µC
2-3


3Pages


IRF121 電子部品, 半導体
IRF120, IRF121, IRF122, IRF123
Typical Performance Curves Unless Otherwise Specified (Continued)
5.0
VDS 50V
80µs PULSE TEST
4.0
TJ = 25oC
3.0
TJ = 175oC
2.0
1.0
0
0 3 6 9 12 15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
10
TJ = 175oC
1
TJ = 25oC
0.1
0.0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 9.2A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 3 6 9 12 15
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
2-6

6 Page



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共有リンク

Link :


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IRF120

N-Channel Power MOSFETs/ 11 A/ 60-100 V

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