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IRF1010EL の電気的特性と機能

IRF1010ELのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF1010EL
部品説明 Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF1010EL Datasheet, IRF1010EL PDF,ピン配置, 機能
l Advanced Process Technology
l Surface Mount (IRF1010ES)
l Low-profile through-hole (IRF1010EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
www.irf.com
PD - 91720
IRF1010ES
IRF1010EL
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 12m
ID = 84A‡
S
D2Pak
IRF1010ES
TO-262
IRF1010EL
Max.
84‡
59
330
200
1.4
± 20
50
17
4.0
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
02/14/02

1 Page





IRF1010EL pdf, ピン配列
IRF1010ES/IRF1010EL
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
10
4 5 6 7 8 9 10 11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
3.0 ID = 84A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF1010EL 電子部品, 半導体
IRF1010ES/IRF1010EL
15V
VDS
L
DR IV ER
RG
2V0GVS
tp
D.U .T
IA S
0.01
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
800
ID
TOP
20A
35A
BOTTOM 50A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com

6 Page



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共有リンク

Link :


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