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IR2132 の電気的特性と機能

IR2132のメーカーはInternational Rectifierです、この部品の機能は「3-PHASE BRIDGE DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IR2132
部品説明 3-PHASE BRIDGE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IR2132 Datasheet, IR2132 PDF,ピン配置, 機能
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Data Sheet No. PD-6.033E
IR2132
3-PHASE BRIDGE DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
n Undervoltage lockout for all channels
n Over-current shutdown turns off all six drivers
n Independent half-bridge drivers
n Matched propagation delay for all channels
n Outputs out of phase with inputs
Description
The IR2132 is a high voltage, high speed power
MOSFET and IGBT driver with three independent high
and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic con-
struction. Logic inputs are compatible with 5V CMOS
or LSTTL outputs. A ground-referenced operational
amplifier provides analog feedback of bridge current
via an external current sense resistor. A current trip
function which terminates all six outputs is also de-
rived from this resistor. An open drain FAULT signal
indicates if an over-current or undervoltage shutdown
has occurred. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched
to simplify use at high frequencies.The floating chan-
nels can be used to drive N-channel power MOSFETs
or IGBTs in the high side configuration which oper-
ate up to 600 volts.
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.) 675 & 425 ns
Deadtime (typ.)
0.8 µs
Packages
Typical Connection
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-165

1 Page





IR2132 pdf, ピン配列
Previous Datasheet
Index
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IR2132
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3) = 15V, VS0,1,2,3 = VSS, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic
electrical characteristics are defined in Figures 3 through 5.
Symbol
ton
toff
tr
tf
titrip
tbl
tflt
tflt,in
tfltclr
DT
SR+
SR-
Parameter
Definition
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
ITRIP to Output Shutdown Prop. Delay
ITRIP Blanking Time
ITRIP to FAULT Indication Delay
Input Filter Time (All Six Inputs)
LIN1,2,3 to FAULT Clear Time
Deadtime
Operational Amplifier Slew Rate (+)
Operational Amplifier Slew Rate (-)
Value
Figure Min. Typ. Max. Units Test Conditions
11 500 675 850
12 300 425 550
VIN = 0 & 5V
13 — 80 125
VS1,2,3 = 0 to 600V
14 — 35 55 ns
15 400 660 920
VIN, VITRIP = 0 & 5V
— — 400 —
VITRIP = 1V
16 335 590 845
VIN, VITRIP = 0 & 5V
— — 310 —
VIN = 0 & 5V
17 6.0 9.0 12.0 µs VIN, VITRIP = 0 & 5V
18 0.4 0.8 1.2
VIN = 0 & 5V
19 4.4 6.2 — V/µs
20 2.4 3.2 —
Static Electrical Characteristics
VBIAS (VCC, VBS1,2,3) = 15V, VS0,1,2,3 = VSS and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all six logic input leads: HIN1,2,3 & LIN1,2,3 . The VO and IO parameters
are referenced to VS0,1,2,3 and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
Symbol
VIH
VIL
VIT,TH+
VOH
VOL
ILK
IQBS
IQCC
IIN+
IIN-
IITRIP+
IITRIP-
VBSUV+
VBSUV-
VCCUV+
VCCUV-
Ron,FLT
Parameter
Definition
Logic “0” Input Voltage (OUT = LO)
Logic “1” Input Voltage (OUT = HI)
ITRIP Input Positive Going Threshold
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent VBS Supply Current
Quiescent VCC Supply Current
Logic “1” Input Bias Current (OUT = HI)
Logic “0” Input Bias Current (OUT = LO)
“High” ITRIP Bias Current
“Low” ITRIP Bias Current
VBS Supply Undervoltage Positive Going
Threshold
VBS Supply Undervoltage Negative Going
Threshold
VCC Supply Undervoltage Positive Going
Threshold
VCC Supply Undervoltage Negative Going
Threshold
FAULT Low On-Resistance
Figure
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Min.
2.2
400
7.5
7.1
8.3
8.0
Value
Typ. Max. Units
——
— 0.8
490 580
— 100
— 100
— 50
15 30
3.0 4.0
450 650
225 400
75 150
— 100
8.35 9.2
V
mV
µA
mA
µA
nA
7.95 8.8
9.0 9.7
V
8.7 9.4
55 75
Test Conditions
VIN = 0V, IO = 0A
VIN = 5V, IO = 0A
VB = VS = 600V
VIN = 0V or 5V
VIN = 0V or 5V
VIN = 0V
VIN = 5V
ITRIP = 5V
ITRIP = 0V
To Order
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-167


3Pages


IR2132 電子部品, 半導体
Previous Datasheet
IR2132
Device Information
Process & Design Rule
Transistor Count
Die Size
Die Outline
Index
Next Data Sheet
HVDCMOS 4.0 µm
700
126 X 175 X 26 (mil)
Thickness of Gate Oxide
Connections
Material
First Width
Layer
Spacing
Thickness
Material
Second
Width
Layer
Spacing
Thickness
Contact Hole Dimension
Insulation Layer
Material
Thickness
Passivation
Material
(1) Thickness
Passivation
Material
(2) Thickness
Method of Saw
Method of Die Bond
Wire Bond
Method
Material
Leadframe
Material
Die Area
Lead Plating
Package
Types
Materials
Remarks: * Patent Pending
B-170 CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL
800Å
Poly Silicon
4 µm
6 µm
5000Å
Al - Si (Si: 1.0% ±0.1%)
6 µm
9 µm
20,000Å
8 µm X 8 µm
PSG (SiO2)
1.5 µm
PSG (SiO2)
1.5 µm
Proprietary*
Proprietary*
Full Cut
Ablebond 84 - 1
Thermo Sonic
Au (1.0 mil / 1.3 mil)
Cu
Ag
Pb : Sn (37 : 63)
28 Lead PDIP & SOIC / 44 Lead PLCC
EME6300 / MP150 / MP190
To Order

6 Page



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共有リンク

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