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IR2122 の電気的特性と機能

IR2122のメーカーはInternational Rectifierです、この部品の機能は「CURRENT SENSING SINGLE CHANNEL DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IR2122
部品説明 CURRENT SENSING SINGLE CHANNEL DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IR2122 Datasheet, IR2122 PDF,ピン配置, 機能
Preliminary Data Sheet No. PD60130-J
IR2122(S)
CURRENT SENSING SINGLE CHANNEL DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
FAULT lead indicates shutdown has occured
Output out of phase with input
Description
The IR2122(S) is a high voltage, high speed power
MOSFET and IGBT driver. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS or LSTTL outputs, down to
3.3V. The protection circuity detects over-current in
the driven power transistor and terminates the gate
drive voltage. An open drain FAULT signal is pro-
vided to indicate that an over-current shutdown has
occurred. The output driver features a high pulse
current buffer stage designed for minimum cross-con-
duction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
or low side configuration which operates up to 600
volts.
Product Summary
VOFFSET
600V max.
IO+/-
110 mA / 110 mA
VOUT
10 - 20V
VCSth
500 mV
ton/off (typ.)
250 & 200 ns
Packages
8-Lead PDIP
8-Lead SOIC
Typical Connection
V CC
IN
FAULT
www.irf.com
V CC
IN
FAULT
COM
VB
HO
CS
VS
(Refer to Lead Assignments for correct pin configuration). This/These
diagram(s) show electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit board layout.
1

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IR2122 pdf, ピン配列
IR2122(S)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Symbol
ton
toff
tr
tf
tbl
tcs
tflt
Definition
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Start-Up Blanking Time
CS Shutdown Propagation Delay
CS to FAULT Pull-Up Propagation Delay
Min.
500
Typ. Max. Units Test Conditions
250
200
250
250
900
ns
VS = 0V
VS = 600V
CL = 1000 pF
CL = 1000 pF
350
450
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to VS.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
VIH
VIL
VCSTH+
VOH
VOL
ILK
IQBS
IQCC
IIN+
IIN-
ICS+
ICS-
VBSUV+
VBSUV-
IO+
Logic 0Input Voltage (OUT = LO)
Logic 1Input Voltage (OUT = HI)
CS Input Positive Going Threshold
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
Offset Supply Leakage Current
Quiescent VBS Supply Current
Quiescent VCC Supply Current
Logic 1Input Bias Current
Logic 0Input Bias Current
HighCS Bias Current
HighCS Bias Current
VBS Supply Undervoltage Positive Going
Threshold
VBS Supply Undervoltage Negative Going
Threshold
Output High Short Circuit Pulsed Current
IO- Output Low Short Circuit Pulsed Current
3.0 — —
— — 0.8
350 500 650
V
— — 100
— — 100 mV
— — 50
150 350
60 120
7.0 15 µ A
— — 1.0
— — 1.0
— — 1.0
10.0 11.4 13.0
9.5 10.4 12.5
V
VCC = 10V to 20V
VCC = 10V to 20V
VCC = 10V to 20V
IO = 0A
IO = 0A
VB = VS = 600V
VIN = 0V or 5V
VIN = 0V or 5V
VIN = 0V
VIN = 5V
VCS = 3V
VCS = 0V
110 130
VO = 0V, VIN = 0V
PW 10 µs
mA
110 130
VO = 15V, VIN = 5V
PW 10 µs
www.irf.com
3


3Pages


IR2122 電子部品, 半導体
IR2122(S)
Case outlines
8-Lead PDIP
01-6014
01-3003 01 (MS-001AB)
D
A5
6
E
8765
12 34
B
H
0.25 [.010]
A
F OOT PRINT
8X 0.72 [.028]
6.46 [.255]
6X e
e1
A
C
3X 1.27 [.050]
y
8X 1.78 [.070]
K x 45°
INCHES
DIM
MIN MAX
A .0532 .0688
A1 .0040 .0098
b .013 .020
c .0075 .0098
D .189 .1968
E .1497 .1574
e .050 BAS IC
e 1 .025 BAS IC
H .2284 .2440
K .0099 .0196
L .016 .050
y 0°
8°
MIL L IME T E RS
MIN MAX
1.35 1.75
0.10 0.25
0.33 0.51
0.19 0.25
4.80 5.00
3.80 4.00
1.27 BAS IC
0.635 BAS IC
5.80 6.20
0.25 0.50
0.40 1.27
0° 8°
8X b
A1
0.25 [.010] C A B
0.10 [.004]
8X L 8X c
7
NOT ES:
1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA.
8-Lead SOIC
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010].
7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO
A SUBS TRAT E.
01-0021 11
01-6027
(MS-012AA)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 5/15/2001
6 www.irf.com

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