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IR2110S の電気的特性と機能

IR2110SのメーカーはInternational Rectifierです、この部品の機能は「HIGH AND LOW SIDE DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IR2110S
部品説明 HIGH AND LOW SIDE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IR2110S Datasheet, IR2110S PDF,ピン配置, 機能
Data Sheet No. PD60147 Rev.T
IR2110(S)/IR2113(S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
Product Summary
VOFFSET (IR2110) 500V max.
(IR2113) 600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
(Also available
LEAD-FREE (PbF))
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
up to 500V or 600V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
TO
LOAD
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IR2110S pdf, ピン配列
IR2110(S)/IR2113(S) &(PbF)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
ton
toff
tsd
tr
tf
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS
turn-on/off
(IR2110)
(IR2113)
Figure Min.
7—
8—
9—
10 —
11 —
——
——
Typ. Max. Units Test Conditions
120 150
94 125
VS = 0V
VS = 500V/600V
110 140 ns VS = 500V/600V
25 35
17 25
— 10
— 20
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IQDD
IIN+
IIN-
VBSUV+
VBSUV-
VCCUV+
VCCUV-
IO+
IO-
Definition
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Quiescent VDD supply current
Logic “1” input bias current
Logic “0” input bias current
VBS supply undervoltage positive going
threshold
VBS supply undervoltage negative going
threshold
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
Figure Min.
12 9.5
13 —
14 —
15 —
16 —
17 —
18 —
19 —
20 —
21 —
22 7.5
Typ. Max. Units Test Conditions
——
— 6.0
— 1.2
— 0.1
— 50
125 230
180 340
15 30
20 40
— 1.0
8.6 9.7
V IO = 0A
IO = 0A
VB=VS = 500V/600V
VIN = 0V or VDD
µA VIN = 0V or VDD
VIN = 0V or VDD
VIN = VDD
VIN = 0V
23 7.0 8.2 9.4
24 7.4 8.5 9.6
V
25 7.0 8.2 9.4
26 2.0 2.5 —
27 2.0 2.5 —
VO = 0V, VIN = VDD
PW 10 µs
A VO = 15V, VIN = 0V
PW 10 µs
www.irf.com
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3Pages


IR2110S 電子部品, 半導体
IR2110(S)/IR2113(S) &(PbF)
250
200
150
Max.
100 Typ.
250
200
Max.
150 Typ.
100
50 50
0
-50
-25
0 25 50 75
Temperature (°C)
100
Figure 7A. Turn-On Time vs. Temperature
125
0
10 12 14 16 18 20
VCC/VBS Supply Voltage (V)
Figure 7B. Turn-On Time vs. VCC/VBS Supply Voltage
250
Max.
200
Typ.
150
250
200
150
100
50
0
0 2 4 6 8 10 12 14 16 18 20
VDD Supply Voltage (V)
Figure 7C. Turn-On Time vs. VDD Supply Voltage
Max.
100
Typ.
50
0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 8A. Turn-Off Time vs. Temperature
250
200
Max.
150
Typ.
100
50
0
10 12 14 16 18 20
VCC/VBS Supply Voltage (V)
Figure 8B. Turn-Off Time vs. VCC/VBS Supply Voltage
250
200
Max.
150
100
Typ
50
0
0 2 4 6 8 10 12 14 16 18 20
VDD Supply Voltage (V)
Figure 8C. Turn-Off Time vs. VDD Supply Voltage
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共有リンク

Link :


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