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IR2110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IR2110
部品説明 HIGH AND LOW SIDE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IR2110 Datasheet, IR2110 PDF,ピン配置, 機能
Data Sheet No. PD60147 Rev.T
IR2110(S)/IR2113(S) &(PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
Product Summary
VOFFSET (IR2110) 500V max.
(IR2113) 600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for minimum
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
(Also available
LEAD-FREE (PbF))
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
up to 500V or 600V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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