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IR2010 の電気的特性と機能

IR2010のメーカーはInternational Rectifierです、この部品の機能は「HIGH AND LOW SIDE DRIVER」です。


製品の詳細 ( Datasheet PDF )

部品番号 IR2010
部品説明 HIGH AND LOW SIDE DRIVER
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IR2010 Datasheet, IR2010 PDF,ピン配置, 機能
Data Sheet No. PD60195-D
IR2010(S) & (PbF)
Features
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation Product Summary
Fully operational to 200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
VOFFSET
IO+/-
200V max.
3.0A / 3.0A typ.
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Shut down input turns off both channels
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
VOUT
ton/off
Delay Matching
10 - 20V
95 & 65 ns typ.
15 ns max.
Applications
Audio Class D amplifiers
High power DC-DC SMPS converters
Other high frequency applications
Description
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT
drivers with independent high and low side referenced output channels, ideal for Audio
Class D and DC-DC converter applications. Logic inputs are compatible with standard
CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation de-
lays are matched to simplify use in high frequency applications. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configura-
tion which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech-
nologies enable ruggedized monolithic construction.
Packages
14-Lead PDIP
16-Lead SOIC
Typical Connection
200V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
TO
LOAD
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IR2010 pdf, ピン配列
IR2010(S) & (PbF)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, CL = 1000 pF, TA = 25°C and VSS = COM unless otherwise specified. The dynamic
electrical characteristics are measured using the test circuit shown in Figure 3.
Symbol
ton
toff
tsd
tr
tf
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Shutdown propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Figure Min. Typ. Max. Units Test Conditions
7 50 95 135
8 30 65 105
9 35 70 105
ns
10 — 10 20
VS = 0V
VS = 200V
VS = 200V
11 — 15 25
6 — — 15
Static Electrical Characteristics
VBIAS (VCC, VBS, VDD) = 15V, TA = 25°C and VSS = COM unless otherwise specified. The VIN, VTH and IIN parameters
are referenced to VSS and are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are
referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol
VIH
VIL
VIH
VIL
VOH
VOL
ILK
IQBS
IQCC
IQDD
IIN+
IIN-
VBSUV+
VBSUV-
VCCUV+
VCCUV-
IO+
IO-
Definition
Logic “1” input voltage
Logic “0” input voltage
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, VBIAS - VO
Low level output voltage, VO
Offset supply leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Quiescent VDD supply current
Logic “1” input bias current
Logic “0” input bias current
VBS supply undervoltage positive going
threshold
VBS supply undervoltage negative going
threshold
VCC supply undervoltage positive going
threshold
VCC supply undervoltage negative going
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
Figure Min.
12 9.5
13 —
12 2
13 —
14 —
15 —
16 —
17 —
18 —
19 —
20 —
21 —
22 7.5
Typ. Max. Units Test Conditions
——
— 6.0
VDD = 15V
——
—1
V
VDD = 3.3V
— 1.0
— 0.1
— 50
70 210
100 230
15
20 40
— 1.0
8.6 9.7
µA
IO = 0A
IO = 0A
VB=VS = 200V
VIN = 0V or VDD
VIN = 0V or VDD
VIN = 0V or VDD
VIN = VDD
VIN = 0V
23 7.0 8.2 9.4 V
24 7.5 8.6 9.7
25 7.0 8.2 9.4
26 2.5 3.0 —
VO = 0V, VIN = VDD
PW 10 µs
27 2.5 3.0 — A VO = 15V, VIN = 0V
PW 10 µs
www.irf.com
3


3Pages


IR2010 電子部品, 半導体
IR2010(S) & (PbF)
250
200 m ax
150
typ
100
50
0
-50
-25
0
25 50 75 100
Temperature (C)
Figure 7A. Turn-on Time vs. Temperature
125
300
250
200
m ax
150
100
typ
50
0
0 2 4 6 8 10 12 14 16 18
VDD Supply Voltage (V)
Figure 7C. Turn-on Time vs VDD Voltage
20
250
200
150
m ax
100
50 typ
0
10 12 14 16 18 20
VCC/VBS Supply Voltage (V)
Figure 8B. Turn-off Time vs. VCC/VBS Voltage
6
250
200
m ax
150
100
typ
50
0
10 12 14 16 18
VCC/VBS Supply Voltage (V)
Figure 7B. Turn-on Time vs. VCC/VBS Voltage
20
250
200
max
150
100
typ
50
0
-50 -25
0 25 50 75
Temperature (C)
100
Figure 8A. Turn-off Time vs. Temperature
125
300
250
200
150
max
100
50 typ
0
0 2 4 6 8 10 12 14 16 18 20
Vdd Supply Voltage (V)
Figure 8C. Turn-off Time vs. VDD Voltage
www.irf.com

6 Page



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