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IXTK82N25P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK82N25P
部品説明 Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK82N25P Datasheet, IXTK82N25P PDF,ピン配置, 機能
PolarTM
Power MOSFET
IXTT82N25P
IXTQ82N25P
IXTK82N25P
VDSS =
ID25 =
RDS(on)
250V
82A
38m
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P&TO-264)
TO-268
TO-3P
TO-264
Maximum Ratings
250
250
V
V
20 V
30 V
82 A
75 A
200 A
500 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4.0 g
5.5 g
10.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
250 V
VGS(th)
VDS = VGS, ID = 250μA
2.5 5.0 V
IGSS VGS = 20V, VDS = 0V100 nA
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
25 A
250 A
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
38 m
TO-268 (IXTT)
G
S
D (Tab)
TO-3P( IXTQ)
G
D
S
TO-264 (IXTK)
D (Tab)
G
DS
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2014 IXYS All Rights Reserved
DS99121F(7/14)

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