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IXBF9N140 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBF9N140
部品説明 High Voltage BIMOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXBF9N140 Datasheet, IXBF9N140 PDF,ピン配置, 機能
Advanced Technical Information
High Voltage
BIMOSFETTM
in High Voltage
ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N140
IXBF 9N160
IC25 = 7 A
VCES = 1400/1600 V
VCE(sat) = 4.9V
tf = 40 ns
1
5
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
C
ies
QGon
VF
RthJC
Conditions
TVJ = 25°C to 150°C
IXBF 9N140
IXBF 9N160
TC = 25°C
TC = 90°C
VGE = 15/0 V; RG = 100 W; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1400
1600
V
V
± 20 V
7A
4A
12
0.8VCES
70
A
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 5 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.5 mA; VGE = VCE
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 5 A
VGE = 15/0 V; RG = 100 W
4.9 7 V
5.6 V
4 8V
0.1 mA
0.1 mA
500 nA
200 ns
60 ns
180 ns
40 ns
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 600V; VGE = 15 V; IC = 7 A
(reverse conduction); IF = 5 A
550 pF
44 nC
3.6 V
1.75 K/W
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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