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IRLI510A の電気的特性と機能

IRLI510AのメーカーはFairchild Semiconductorです、この部品の機能は「ADVANCED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLI510A
部品説明 ADVANCED POWER MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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IRLI510A Datasheet, IRLI510A PDF,ピン配置, 機能
$GYDQFHG 3RZHU 026)(7
IRLW/I510A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ VDS = 100V
Lower RDS(ON): 0.336(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.44
ID = 5.6 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
5.6
4.0
20
±20
62
5.6
3.7
6.5
3.8
37
0.25
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.1
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1

1 Page





IRLI510A pdf, ピン配列
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
V
GS
101 Top : 7.0V
6.0 V
5.5 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. T = 25 oC
C
100 101
V , Drain-Source Voltage [V]
DS
Fig 3. On-Resistance vs. Drain Current
0.8
V =5V
0.6 GS
0.4
0.2
V = 10 V
GS
@ Note : T = 25 oC
J
0.0
0 5 10 15 20
I , Drain Current [A]
D
Fig 5. Capacitance vs. Drain-Source Voltage
350
280
C iss
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
210
C oss
140
C rss
70
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRLW/I510A
Fig 2. Transfer Characteristics
101
100
10-1
0
175 oC
25 oC
- 55 oC
@ Notes :
1. V = 0 V
GS
2. V = 40 V
DS
3. 250 µs Pulse Test
2468
V , Gate-Source Voltage [V]
GS
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. V = 0 V
GS
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
2.0
Fig 6. Gate Charge vs. Gate-Source Voltage
6
V = 20 V
DS
V = 50 V
DS
V = 80 V
DS
4
2
@ Notes : I = 5.6 A
D
0
0246
Q , Total Gate Charge [nC]
G
3


3Pages


IRLI510A 電子部品, 半導体
IRLW/I510A
1&+$11(/
32:(5 026)(7
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
dv/dt controlled by RG
IS controlled by Duty Factor D
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a-t-e--P--u-l-s-e---W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLI510A

ADVANCED POWER MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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