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IXFT6N100F の電気的特性と機能

IXFT6N100FのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFT6N100F
部品説明 Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFT6N100F Datasheet, IXFT6N100F PDF,ピン配置, 機能
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
High dV/dt, Low trr
Low
Qg,
Low
Intrinsic
Rg
IXFH 6N100F
IXFT 6N100F
VDSS
ID25
RDS(on)
= 1000 V
= 6A
= 1.9
t
rr
250
ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
TO-247 AD (IXFH)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
T
J
150°C,
R
G
=
2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
1000
1000
±20
±30
6
24
6
20
500
15
V
V
V
V
A
A
A
mJ
mJ
V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
VGS = 0 V, ID = 500uA
VDS = VGS, ID = 2.5 mA
VGS = ±20 V, VDS = 0
V =V
DS DSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
1000
V
3.0 5.5 V
±100 nA
TJ = 125°C
50 µA
1 mA
1.9
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
Space savings
High power density
© 2002 IXYS All rights reserved
98732B (9/02)

1 Page





IXFT6N100F pdf, ピン配列
IXFH 6N100F
IXFT 6N100F
Fig. 1. Output Characteristics at 25oC
12
TJ = 25OC
10
8
6
VGS = 10V
9V
8V
7V
6V
4
2
5V
0
0 5 10 15 20
VDS - Volts
Fig. 3. RDS(ON) vs. Drain Current
4
VGS = 10V
3
TJ = 125OC
2
TJ = 25OC
1
0
0 2 4 6 8 10 12
ID - Amperes
Fig. 5. Drain Current vs. Case Temperature
8
6
4
2
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
© 2002 IXYS All rights reserved
Fig. 2. Output Characteristics at 125oC
8
TJ = 125OC
6
VGS = 10V
9V
8V
7V
6V
4
5V
2
0
0 5 10 15 20 25
VDS - Volts
Fig. 4. RDS(ON) vs. TJ
3.0
VGS = 10V
2.5
2.0 ID = 6A
1.5
1.0 ID = 3A
0.5
0.0
-25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6. Admittance Curves
6
4
TJ = 125oC
2 TJ = 25oC
TJ = -40oC
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS - Volts


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部品番号部品説明メーカ
IXFT6N100F

Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFT6N100F

Power MOSFETs

IXYS Corporation
IXYS Corporation


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