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IRHM8450 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHM8450
部品説明 REPETITIVE AVALANCHE AND dv/dt RATED
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHM8450 Datasheet, IRHM8450 PDF,ピン配置, 機能
PD - 90673A
IRHM7450
IRHM8450
REPETITIVE AVALANCHE AND dv/dt RATED
JANSR2N7270
HEXFET® TRANSISTOR
JANSH2N7270
N CHANNEL
MEGA RAD HARD
500Volt, 0.45, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings 
Part Number
IRHM7450
IRHM8450
BVDSS
500V
500V
RDS(on)
0.45
0.45
ID
11A
11A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
IRHM7450, IRHM8450 Units
Continuous Drain Current
Continuous Drain Current
11
7.0 A
Pulsed Drain Current ‚
44
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy ƒ 500 mJ
Avalanche Current ‚
11 A
Repetitive Avalanche Energy‚
15 mJ
Peak Diode Recovery dv/dt „
3.5 V/ns
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g
www.irf.com
1
02/01/99

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