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PDF IRF6644 Data sheet ( Hoja de datos )
| Número de pieza | IRF6644 | |
| Descripción | DirectFETPower MOSFET | |
| Fabricantes | International Rectifier | |
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l Lead and Bromide Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
PD - 96908C
IRF6644
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 10.7mΩ@ 10V
Qg tot
Qgd
Vgs(th)
35nC 11.5nC
3.7V
MN
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MN
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
100
±20
10.3
8.3
60
82
220
6.2
V
A
mJ
A
0.12
0.08
0.04
ID = 6.2A
TJ = 125°C
14
TA= 25°C
13
12
11
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
0.00
4.0
TJ = 25°C
6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
10
0 4 8 12 16
ID, Drain Current (A)
Fig 2. Typical On-Resistance Vs. Drain Current
20
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 12mH, RG = 25Ω, IAS = 6.2A.
1
11/23/04
1 page  
1000.0
100.0
10.0 TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.0 1.0 2.0 3.0 4.0 5.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
12
10
8
6
4
2
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000
800
600
IRF6644
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
100msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0.01 0.10
1.00
10msec
10.00 100.00 1000.00
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
5.0
ID = 1.0A
4.5
ID = 1.0mA
ID = 250µA
ID = 150µA
4.0
3.5
3.0
2.5
2.0
-50 -25
0
25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 2.8A
3.3A
BOTTOM 6.2A
400
200
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6644.PDF ] | |
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