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PDF MMSD914T1 Data sheet ( Hoja de datos )
| Número de pieza | MMSD914T1 | |
| Descripción | Switching Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMSD914T1
Preferred Device
Switching Diode
The switching diode has the following features:
• SOD–123 Surface Mount Package
• High Breakdown Voltage
• Fast Speed Switching Time
http://onsemi.com
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board (1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Symbol Value
VR
IF
IFM(surge)
100
200
500
Unit
Vdc
mAdc
mAdc
Symbol
PD
Max
225
Unit
mW
RqJA
PD
1.8 mW/°C
556 °C/W
300 mW
RqJA
TJ, Tstg
2.4
417
–55 to
+150
mW/°C
°C/W
°C
2
1
PLASTIC
SOD–123
CASE 425
DEVICE MARKING
5D
ORDERING INFORMATION
Device
Package
Shipping
MMSD914T1 SOD–123 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µAdc)
Reverse Voltage Leakage Current (VR = 20 Vdc)
(VR = 75 Vdc)
V(BR)
IR
Forward Voltage (IF = 10 mAdc)
Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
VF
CD
trr
Min Max
100 —
— 25
— 5.0
— 1000
— 4.0
— 4.0
Unit
Vdc
nAdc
mAdc
mVdc
pF
ns
© Semiconductor Components Industries, LLC, 2000
March, 2000 – Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMSD914T1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMSD914T1.PDF ] | |
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