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SMAJ11 の電気的特性と機能

SMAJ11のメーカーはGeneral Semiconductorです、この部品の機能は「SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 SMAJ11
部品説明 SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
メーカ General Semiconductor
ロゴ General Semiconductor ロゴ 




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SMAJ11 Datasheet, SMAJ11 PDF,ピン配置, 機能
SMAJ5.0 THRU SMAJ170CA
SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage - 5.0 to 170 Volts Peak Pulse Power - 300 Watts
0.065 (1.65)
0.049 (1.25)
0.090 (2.29)
0.078 (1.98)
DO-214AC
0.177 (4.50)
0.157 (3.99)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
FEATURES
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts
to V(BR) min.
300W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the color band denotes
the cathode, which is postitive with respect to the anode
under normal TVS operation
Mounting Position: Any
Weight: 0.002 ounces, 0.064 gram
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use suffix C or CA for types SMAJ5.0 thru SMAJ170 (e.g. SMAJ5.0C, SMAJ170CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Peak pulse power dissipation with a 10/1000µs waveform (NOTE 1, 2, FIG.1)
Peak pulse current with a 10/1000µs waveform (NOTE 1)
Peak forward surge current 8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) (NOTES 2, 3) - unidirectional only
Maximum instantaneous forward voltage at 25A (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
PPM
IPPM
IFSM
VF
TJ, TSTG
VALUE
Minimum 300
SEE TABLE 1
40.0
3.5
-55 to +150
UNITS
Watts
Amps
Amps
Volts
°C
NOTES:
(1) Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Measured on 8.3ms single half sine-wave. For uni-directional devices only.
1/20/99

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SMAJ11 pdf, ピン配列
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) TABLE 1 (Cont’d)
Device
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
Device
Marking Code
UNI BI
RD ZD
RE ZE
RF ZF
RG ZG
RH ZH
RK ZK
RL ZL
RM ZM
RN ZN
RP ZP
RQ ZQ
RR ZR
RS ZS
RT ZT
RU ZU
RV ZV
RW ZW
RX ZX
RY ZY
RZ ZZ
SD VD
SE VE
SF VF
SG VG
SH VH
SK VK
SL VL
SM VM
SN VN
SP VP
SQ VQ
SR VR
Breakdown Voltage
V(BR) (Volts) at IT
(NOTE 1)
Min.
Max.
60.0 73.3
60.0 66.3
64.4 78.7
64.4 71.2
66.7 81.5
66.7 73.7
71.1 86.4
71.1 78.6
77.8 95.1
77.8 86
83.3 102
83.3 92.1
86.7 106
86.7 95.8
94.4 115
94.4 104
100 122
100 111
111 136
111 123
122 149
122 135
133 163
133 147
144 176
144 159
167 204
167 185
178 218
178 197
189 231
189 209
Test
Current
IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1.0
Working Peak
Reverse Voltage
VWM (Volts)
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse
Leakage
a VWM
(NOTE 3) ID (µA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Maximum
Peak Pulse
Surge Current IPPM
(NOTE 2) (Amps)
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
Maximum Clamping
Voltage at IPPM
Vc (Volts)
3.1
3.4
2.9
3.2
2.8
3.1
2.6
2.9
2.4
2.7
2.2
2.5
2.2
2.4
2
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
NOTES:
(1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) For the bi-directional SMAJ5.0CA, the maximum V(BR) is 7.25V.
(5) All terms and symbols are consistent with ANSI/IEEE C62.35
APPLICATION NOTES
RECOMMENDED PAD LAYOUT
The pad dimensions should be 0.010” (2.5mm) longer than the contact size in the lead
axis. This allows a solder fillet to form, see figure below. Contact factory for soldering
methods.
MODIFIED J-BEND
0.060 MIN
(1.52 MIN)
0.094 MAX
(2.38 MAX)
0.050 MIN
(1.27 MIN)
Dimensions in in0c.h2(52e.05s8R)EaFnd (millimeters)
This device is designed specifically for transient voltage suppression from
threats generated by ESD for board level load switching components.
The wide leads assure a large surface contact for good heat dissipation,
and a low resistance path for surge current flow to ground.
This series is designed to optimize board space and for use with surface
mount technology automated assembly equipment.
They can be easily mounted on printed circuit boards and ceramic
substrates to protect sensitive components from transient voltage
damage.


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