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K9F5616Q0B-HIB0 の電気的特性と機能

K9F5616Q0B-HIB0のメーカーはSamsung semiconductorです、この部品の機能は「32M x 8 Bit / 16M x 16 Bit NAND Flash Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 K9F5616Q0B-HIB0
部品説明 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
メーカ Samsung semiconductor
ロゴ Samsung semiconductor ロゴ 




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K9F5616Q0B-HIB0 Datasheet, K9F5616Q0B-HIB0 PDF,ピン配置, 機能
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Draft Date
May. 15th 2001
0.1 At Read2 operation in X16 device
: A3 ~ A7 are Don’t care ==> A3 ~ A7 are "L"
Sep. 20th 2001
0.2 1. IOL(R/B) of 1.8V device is changed.
Nov. 5th 2001
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. WP pin provides hardware protection and is recommended to be kept
at VIL during power-up and power-down and recovery time of minimum
1µs is required before internal circuit gets ready for any command
sequences as shown in Figure 15.
---> WP pin provides hardware protection and is recommended to be
kept at VIL during power-up and power-down and recovery time of
minimum 10µs is required before internal circuit gets ready for any
command sequences as shown in Figure 15.
0.3 1. X16 TSOP1 pin is changed.
: #36 pin is changed from VccQ to N.C .
Feb. 15th 2002
0.4
1. In X16 device, bad block information location is changed from 256th
byte to 256th and 261th byte.
Apr. 15th 2002
2. tAR1, tAR2 are merged to tAR.(page 12)
(before revision) min. tAR1 = 20ns , min. tAR2 = 50ns
(after revision) min. tAR = 10ns
3. min. tCLR is changed from 50ns to 10ns.(page12)
4. min. tREA is changed from 35ns to 30ns.(page12)
5. min. tWC is changed from 50ns to 45ns.(page12)
6. Unique ID for Copyright Protection is available
-The device includes one block sized OTP(One Time Programmable),
which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by
contact with Samsung.
7. tRHZ is divide into tRHZ and tOH.(page 12)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
8. tCHZ is divide into tCHZ and tOH.(page 12)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F5616Q0B-HIB0 pdf, ピン配列
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F5608Q0B-D,H
K9F5616Q0B-D,H
K9F5608U0B-Y,P
K9F5608U0B-D,H
K9F5608U0B-V,F
K9F5616U0B-Y,P
K9F5616U0B-D,H
Vcc Range
1.70 ~ 1.95V
2.7 ~ 3.6V
Organization
X8
X16
X8
X16
PKG Type
TBGA
TSOP1
TBGA
WSOP1
TSOP1
TBGA
FEATURES
Voltage Supply
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Random Access : 10µs(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F56XXU0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F56XXX0Bs extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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3Pages


K9F5616Q0B-HIB0 電子部品, 半導体
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F5608U0B-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
0.70 MAX
0.58±0.04
#1 #48
#24 #25
(0.1Min)
17.00±0.20
6
0.45~0.75

6 Page



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部品番号部品説明メーカ
K9F5616Q0B-HIB0

32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

Samsung semiconductor
Samsung semiconductor


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