ISL6206CB-T Datasheet PDF - Intersil Corporation
| Part Number | ISL6206CB-T | |
| Description | High Voltage Synchronous Rectified Buck MOSFET Driver | |
| Manufacturers | Intersil Corporation | |
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®
Data Sheet
High Voltage Synchronous Rectified Buck
MOSFET Driver
The ISL6206 is a high voltage, high frequency, dual
MOSFET driver specifically designed to drive two N-Channel
power MOSFETs in a synchronous-rectified buck converter
topology in mobile computing applications. This driver
combined with an Intersil Multi-Phase Buck PWM controller
forms a complete single-stage core-voltage regulator
solution for advanced mobile microprocessors.
The ISL6206 features a three-state PWM input that, working
together with any Intersil multiphase PWM controllers, will
prevent a negative transient on the output voltage when the
output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
The output drivers in the ISL6206 has the capacity to
efficiently switch power MOSFETs at frequencies up to
2MHz. Each driver is capable of driving a 3000pF load with a
15ns propagation delay and 20ns transition time. This
product implements bootstrapping on the upper gate,
reducing implementation complexity and allowing the use of
higher performance, cost effective, N-Channel MOSFETs.
Adaptive shoot-through protection is integrated to prevent
both MOSFETs from conducting simultaneously.
Ordering Information
TEMP. RANGE
PART NUMBER
(oC)
PACKAGE PKG. NO.
ISL6206CB
-10 to 85 8 Ld SOIC M8.15
ISL6206CB-T
8 Ld SOIC Tape and Reel
ISL6206
May 2002
FN9071.1
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 30V Operation Voltage
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 15ns
• Three-state Input for Output Stage Shutdown
• Internal Bootstrap Schottky Diode
Applications
• Core Voltage Supplies for Intel and AMD® Mobile
Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Output Voltage DC-DC Converters
• High Input Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinout
ISL6206CB (SOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 NC
6 VCC
5 LGATE
ti
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
AMD® is a registered trademark of Advanced Micro Devices, Inc.
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ISL6206
Three-state PWM Input
A unique feature of the ISL6206 and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the gate driver has turned off one
MOSFET before the gate voltage of the other MOSFET is
allowed to rise.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate voltage during UGATE
turn-off. Once the upper MOSFET gate-to-source voltage has
dropped below a threshold of 1V, the LGATE is allowed to
rise.
Bootstrap Diode and Capacitor
This driver features an internal Schottky bootstrap diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
bootstrap capacitor can be chosen from the following
equation:
CBOOT ≥ ∆--Q---V--G--B---A-O---T-O--E---T-
where QGATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The ∆VBOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, QGATE, of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125µF is required.
The next larger standard value capacitance is 0.22µF. A
good quality ceramic capacitor is recommended.
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for
a desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level
will push the IC beyond the maximum recommended
operating junction temperature of 125oC. The maximum
allowable IC power dissipation for the SO-8 package is
approximately 800mW. When designing the driver into an
application, it is recommended that the following calculation
be performed to ensure safe operation at the desired
frequency for the selected MOSFETs. The power dissipated
by the driver is approximated as:
P = fsw(1.5VUQU + VLQL) + IDDQVCC
where fsw is the switching frequency of the PWM signal. VU
and VL represent the upper and lower gate rail voltage. QU
and QL is the upper and lower gate charge determined by
MOSFET selection and any external capacitance added to
the gate pins. The IDDQ VCC product is the quiescent power
of the driver and is negligible
5
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