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Datasheet ISB35166 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ISB35166 | HCMOS STRUCTURED ARRAY ISB35000 SERIES
HCMOS STRUCTURED ARRAY
PRELIMINARY DATA
FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input N |  STMicroelectronics | cmos |
ISB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ISB-A27-0 | N-channel MOSFET Array Ordering number : EISB0005
ISB-A27-0 Ultrathin Miniature Package 4-channel
N-channel MOSFET Array
Overview
The ISB-A27-0 is a SANYO’S original SIP (System In Package) IC that includes four N-channel MOSFET devices. They are mounted into one thin-and-small package by utilizing SANYO’s high-dens  Sanyo mosfet | | |
| 2 | ISB-A40-0 | Reverse-Current Flow Prevention Ordering number : EISB*0008
Ultrathin Miniature Package
ISB-A40-0 Reverse-Current Flow Prevention
for a Cell Phone Charger Circuit SBD×4
Overview
The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is Sanyo data | | |
| 3 | ISB-E48-0 | Charger Circuit Voltage Sensor + 3 P-channel MOSFETs Ordering number : EISB0006A
ISB-E48-0, ISB-E48-1
Ultrathin Miniature Package
Charger Circuit Voltage Sensor + 3 P-channel MOSFETs
Overview
The ISB-E48-0, ISB-E48-1 incorporates in its power input block a high-precision voltage detector that provides protection against overvoltage. The ISB-E48-0, Sanyo mosfet | | |
| 4 | ISB-E48-1 | Charger Circuit Voltage Sensor + 3 P-channel MOSFETs Ordering number : EISB0006A
ISB-E48-0, ISB-E48-1
Ultrathin Miniature Package
Charger Circuit Voltage Sensor + 3 P-channel MOSFETs
Overview
The ISB-E48-0, ISB-E48-1 incorporates in its power input block a high-precision voltage detector that provides protection against overvoltage. The ISB-E48-0, Sanyo mosfet | | |
| 5 | ISB35000 | HCMOS STRUCTURED ARRAY ISB35000 SERIES
HCMOS STRUCTURED ARRAY
PRELIMINARY DATA
FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input N STMicroelectronics cmos | | |
| 6 | ISB35083 | HCMOS STRUCTURED ARRAY ISB35000 SERIES
HCMOS STRUCTURED ARRAY
PRELIMINARY DATA
FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input N STMicroelectronics cmos | | |
| 7 | ISB35130 | HCMOS STRUCTURED ARRAY ISB35000 SERIES
HCMOS STRUCTURED ARRAY
PRELIMINARY DATA
FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input N STMicroelectronics cmos | |
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