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PDF IS63LV1024-12T Data sheet ( Hoja de datos )
| Número de pieza | IS63LV1024-12T | |
| Descripción | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT | |
| Fabricantes | Integrated Silicon Solution Inc | |
| Logotipo |  |
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IS63LV1024
ISSI®
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
SEPTEMBER 2000
FEATURES
• High-speed access times:
8, 10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
DESCRIPTION
The ISSI IS63LV1024 is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024 is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VCC
GND
I/O0-I/O7
DECODER
128K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. H
10/02/00
1
1 page  
IS63LV1024
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
ADDRESS
DOUT
PREVIOUS DATA VALID
t OHA
t RC
t AA
ISSI ®
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
ADDRESS
OE
CE
DOUT
t LZCE
HIGH-Z
t RC
t AA
t DOE
t LZOE
t ACE
t HZCE
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
t OHA
t HZOE
CE_RD2.eps
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. H
10/02/00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IS63LV1024-12T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IS63LV1024-12J | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT | Integrated Silicon Solution Inc |
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| IS63LV1024-12K | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT | Integrated Silicon Solution Inc |
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