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IS62LV12816L-70TI の電気的特性と機能

IS62LV12816L-70TIのメーカーはIntegrated Silicon Solution Incです、この部品の機能は「128K x 16 CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS62LV12816L-70TI
部品説明 128K x 16 CMOS STATIC RAM
メーカ Integrated Silicon Solution Inc
ロゴ Integrated Silicon Solution  Inc ロゴ 




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IS62LV12816L-70TI Datasheet, IS62LV12816L-70TI PDF,ピン配置, 機能
IS62LV12816L
IS62LV12816L
128K x 16 CMOS STATIC RAM
ISSISSII®®
ADVANCE INFORMATION
AUGUST 1998
FEATURES
• High-speed access time: 70, 100, and 120 ns
• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 3V ± 10% VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA
FUNCTIONAL BLOCK DIAGRAM
1
DESCRIPTION
2The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
3
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
4with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
5A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA.
6
7
A0-A16
DECODER
128K x 16
MEMORY ARRAY
8
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
COLUMN I/O
9
10
11
12
The specification contains ADVANCE INFORMATION. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1998, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98
1

1 Page





IS62LV12816L-70TI pdf, ピン配列
IS62LV12816L
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
3.0V ± 10%
3.0V ± 10%
ISSI ®
1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.5 to Vcc+0.5
V
TBIAS
Temperature Under Bias
–40 to +85
°C
VCC Vcc Related to GND
–0.3 to +4.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT Power Dissipation
1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VCC = Min., IOH = –1 mA
VOL Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH Input HIGH Voltage
VIL(1)
Input LOW Voltage
ILI Input Leakage
GND VIN VCC
ILO Output Leakage
GND VOUT VCC, Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Min.
2.0
2.2
–0.2
–1
–1
Max.
0.4
VCC + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70 -100 -120
Symbol Parameter
Test Conditions
Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max.,
Com.
— 40
— 30
— 20 mA
Supply Current
IOUT = 0 mA, f = fMAX Ind.
— 60
— 50
— 40
ISB1 TTL Standby Current VCC = Max.,
(TTL Inputs)
VIN = VIH or VIL
CE VIH , f = 0
Com.
Ind.
— 0.4
— 1.0
— 0.4
— 1.0
— 0.4
— 1.0
mA
ISB2 CMOS Standby
VCC = Max.,
Current (CMOS Inputs) CE VCC – 0.2V,
Com.
Ind.
VIN VCC – 0.2V, or
VIN 0.2V, f = 0
— 15
— 25
— 15
— 25
— 15
— 25
µA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2
3
4
5
6
7
8
9
10
11
12
Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98
3


3Pages


IS62LV12816L-70TI 電子部品, 半導体
IS62LV12816L
AC WAVEFORMS
READ CYCLE NO. 2(1,3)
ADDRESS
OE
tAA
CE
LB, UB
tLZCE
DOUT
tLZB
HIGH-Z
tDOE
tLZOE
tACE
tBA
tRC
tOHA
tHZOE
tHZCE
DATA VALID
tHZB
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
ISSI ®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
Symbol Parameter
-70
Min. Max.
-100
Min. Max.
-120
Min. Max.
Unit
tWC Write Cycle Time
tSCE CE to Write End
70 —
65 —
100 —
80 —
120 —
100 —
ns
ns
tAW Address Setup Time to Write End 65 —
80 —
100 —
ns
tHA Address Hold from Write End
0—
0—
0—
ns
tSA Address Setup Time
tPWB LB, UB Valid to End of Write
tPWE WE Pulse Width
0—
60 —
60 —
0—
80 —
80 —
0—
100 —
100 —
ns
ns
ns
tSD Data Setup to Write End
30 —
40 —
50 —
ns
tHD
tHZWE(3)
tLZWE(3)
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
0—
— 30
5—
0—
— 40
5—
0—
— 50
5—
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to
2.2V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
6 Integrated Silicon Solution, Inc.
ADVANCE INFORMATION SR002-0C
08/20/98

6 Page



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部品番号部品説明メーカ
IS62LV12816L-70T

128K x 16 CMOS STATIC RAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS62LV12816L-70TI

128K x 16 CMOS STATIC RAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc


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