IS61LV6416-15TI Datasheet PDF - ETC
| Part Number | IS61LV6416-15TI | |
| Description | 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY | |
| Manufacturers | ETC | |
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IS61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
High-speed access time: 8, 10, 12, and 15 ns
CMOS low power operation
250 mW (typical) operating
250 µW (typical) standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The 1+51 IS61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using 1+51's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
A0-A15
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
64K x 16
MEMORY ARRAY
COLUMN I/O
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR013-0C
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IS61LV6416
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS = OE = VIL, UB or LB = VIL)
ADDRESS
DOUT
t RC
PREVIOUS DATA VALID
t OHA
t AA
t OHA
DATA VALID
READ CYCLE NO. 2(1,3)
ADDRESS
OE
tAA
CE
LB, UB
tLZCE
DOUT
tLZB
HIGH-Z
tDOE
tLZOE
tACE
tBA
tRC
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
tOHA
tHZOE
tHZCE
DATA VALID
tHZB
Integrated Circuit Solution Inc.
SR013-0C
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IS61LV6416-15TI electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IS61LV6416-15TI.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IS61LV6416-15T | The function is 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY. ETC | |
| IS61LV6416-15TI | The function is 64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY. ETC | |
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