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IS61LV5128-15BI の電気的特性と機能

IS61LV5128-15BIのメーカーはIntegrated Silicon Solution Incです、この部品の機能は「512K x 8 HIGH-SPEED CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61LV5128-15BI
部品説明 512K x 8 HIGH-SPEED CMOS STATIC RAM
メーカ Integrated Silicon Solution Inc
ロゴ Integrated Silicon Solution  Inc ロゴ 




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IS61LV5128-15BI Datasheet, IS61LV5128-15BI PDF,ピン配置, 機能
IS61LV5128
ISSI®
512K x 8 HIGH-SPEED CMOS STATIC RAM
JULY 2001
FEATURES
• High-speed access times:
10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV5128 is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The IS61LV5128
is fabricated using ISSI's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV5128 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-
pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
VCC
GND
I/O0-I/O7
DECODER
512K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE
CONTROL
OE CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
1

1 Page





IS61LV5128-15BI pdf, ピン配列
IS61LV5128
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND 0.5 to Vcc + 0.5 V
TBIAS
Temperature Under Bias
55 to +125
°C
TSTG
Storage Temperature
65 to +150
°C
PT Power Dissipation
1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
ISSI ®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
40°C to +85°C
10 ns
VCC
3.3V +10%, -5%
3.3V +10%, -5%
12 ns, 15 ns
VCC
3.3V ± 10%
3.3V ± 10%
CAPACITANCE(1,2)
Symbol Parameter
Conditions
Max.
CIN Input Capacitance
VIN = 0V
6
CI/O
Input/Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. B
07/16/01
3


3Pages


IS61LV5128-15BI 電子部品, 半導体
IS61LV5128
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL)
ADDRESS
DOUT
t RC
PREVIOUS DATA VALID
t OHA
t AA
ISSI ®
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3) (CE and OE Controlled)
ADDRESS
OE
CE
DOUT
t LZCE
HIGH-Z
t RC
t AA t OHA
t DOE
t LZOE
t ACE
t HZOE
t HZCE
DATA VALID
CE_RD2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
6 Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. B
07/16/01

6 Page



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部品番号部品説明メーカ
IS61LV5128-15B

512K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc
IS61LV5128-15BI

512K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution  Inc
Integrated Silicon Solution Inc


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