IS41C16256-60TI Datasheet PDF - Integrated Silicon Solution Inc
| Part Number | IS41C16256-60TI | |
| Description | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
| Manufacturers | Integrated Silicon Solution Inc | |
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IS41C16256
IS41LV16256
256K x 16 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
JUNE 2000
FEATURES
• TTL compatible inputs and outputs
• Refresh Interval: 512 cycles/8 ms
• Refresh Mode : RAS-Only, CAS-before-RAS
(CBR), and Hidden
• JEDEC standard pinout
• Single power supply
5V ± 10% (IS41C16256)
3.3V ± 10% (IS41LV16256)
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC
DESCRIPTION
The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit
high-performanceCMOSDynamicRandomAccessMemory. Both
products offer accelerated cycle access EDO Page Mode. EDO
Page Mode allows 512 random accesses within a single row with
access cycle time as short as 10ns per 16-bit word. The Byte Write
control, of upper and lower byte, makes the IS41C16256 and
IS41LV16256 ideal for use in 16 and 32-bit wide data bus systems.
These features make the IS41C16256 and IS41LV1626 ideally
suited for high band-width graphics, digital signal processing,
high-performance computing systems, and peripheral applications.
The IS41C16256 and IS41LV16256 are packaged in 40-pin
400-mil SOJ and TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-35 -50 -60 Unit
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
35 50 60 ns
10 14 15 ns
Max. Column Address Access Time (tAA)
18
25
30
ns
Min. EDO Page Mode Cycle Time (tPC) 12 20 25 ns
Min. Read/Write Cycle Time (tRC)
60 90 110 ns
PIN CONFIGURATIONS
40-Pin TSOP (Type II)
40-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
1
2
3
4
5
6
7
8
9
10
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
11
12
13
14
15
16
17
18
19
20
40 GND
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 GND
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 NC
29 LCAS
28 UCAS
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40 GND
39 I/O15
38 I/O14
37 I/O13
36 I/O12
35 GND
34 I/O11
33 I/O10
32 I/O9
31 I/O8
30 NC
29 LCAS
28 UCAS
27 OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 GND
PIN DESCRIPTIONS
A0-A8
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
1
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IS41C16256
IS41LV16256
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating
Unit
VT
VCC
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Extended Temperature
Industrail Temperature
Storage Temperature
5V
3.3V
5V
3.3V
–1.0 to +7.0
-0.5 to 4.6
–1.0 to +7.0
-0.5 to 4.6
50
1
0 to +70
–30 to +85
–40 to +85
–55 to +125
V
V
V
V
mA
W
°C
°C
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
ISSI ®
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Extended Ambient Temperature
Industrail Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–30
–40
Typ.
5.0
3.3
—
—
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
85
Unit
V
V
V
°C
°C
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
CIN1 Input Capacitance: A0-A8
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O15
5
7
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. J
06/29/00
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IS41C16256-60TI electronic component. |
| Information | Total 19 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IS41C16256-60TI.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| IS41C16256-60T | The function is 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE. Integrated Silicon Solution Inc | |
| IS41C16256-60TI | The function is 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE. Integrated Silicon Solution Inc | |
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