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PDF IS41C16105-50TE Data sheet ( Hoja de datos )
| Número de pieza | IS41C16105-50TE | |
| Descripción | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
| Fabricantes | Integrated Silicon Solution Inc | |
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IS41C16105
IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI®
FEBRUARY 2000
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— 1,024 cycles/16 ms
• Refresh Mode:
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply:
— 5V ± 10% (IS41C16105)
— 3.3V ± 10% (IS41LV16105)
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
42-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
12
13
14
15
16
17
18
19
20
21
22
44 GND
43 I/O15
42 I/O14
41 I/O13
40 I/O12
39 GND
38 I/O11
37 I/O10
36 I/O9
35 I/O8
34 NC
33 NC
32 LCAS
31 UCAS
30 OE
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
DESCRIPTION
The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access Memo-
ries. FastPageModeallows1,024randomaccesseswithinasingle
row with access cycle time as short as 20 ns per 16-bit word. The
Byte Write control, of upper and lower byte, makes the IS41C16105
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16105 and IS41LV16105 ideally
suited for high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral applications.
The IS41C16105 and IS41LV16105 are packaged in a
42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter
-50 -60 Unit
Max. RAS Access Time (tRAC)
50 60 ns
Max. CAS Access Time (tCAC)
13 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. Fast Page Mode Cycle Time (tPC) 20 25 ns
Min. Read/Write Cycle Time (tRC)
84 104 ns
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/03/00
1
1 page  
IS41C16105
IS41LV16105
ISSI ®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
VCC Supply Voltage
5V
3.3V
–1.0 to +7.0 V
–0.5 to +4.6
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
Extended Temperature
Industrail Temperature
0 to +70
–30 to +85
–40 to +85
°C
°C
°C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Extended Ambient Temperature
Industrail Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–30
–40
Typ.
5.0
3.3
—
—
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
85
Unit
V
V
V
°C
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
5
7
CIO Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/03/00
5
5 Page 
IS41C16105
IS41LV16105
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
ISSI ®
RAS
tRASP
tRP
tCRP
UCAS/LCAS
tRCD
tCSH
tCAS
ADDRESS
tAR
tRAH
tASR
tRAD
Row
tCAH
tASC
Column
tAR
WE
tRCS
tCWL
tRWD
tAWD
tCWD
tPRWC
tCAS
tCP
tCPWD
tASC
tCAH
Column
tCWL
tAWD
tWP tCWD
tRSH
tCAS
tCP
tCRP
tCPWD
tRAL
tASC
tCAH
Column
tCWL
tRWL
tAWD
tWP tCWD
tWP
tAA tAA tAA
tCAC
tCAC
tCAC
OE
tOEA
tOEA
tOEA
I/O0-I/O15
tRAC
tCLZ
OUT
tOEZ
tOED
tDH
tDS tCLZ
IN
OUT
tOEZ
tOED
tDS
tDH
IN
tCLZ
OUT
tOEZ
tOED
tDH
tDS
IN
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/03/00
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IS41C16105-50TE.PDF ] | |
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