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IXTQ82N25P の電気的特性と機能

IXTQ82N25PのメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTQ82N25P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTQ82N25P Datasheet, IXTQ82N25P PDF,ピン配置, 機能
PolarTM
Power MOSFET
IXTT82N25P
IXTQ82N25P
IXTK82N25P
VDSS =
ID25 =
RDS(on)
250V
82A
38m
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-3P&TO-264)
TO-268
TO-3P
TO-264
Maximum Ratings
250
250
V
V
20 V
30 V
82 A
75 A
200 A
500 W
-55 ... +150
150
-55 ... +150
C
C
C
300 °C
260 °C
1.13 / 10
Nm/lb.in
4.0 g
5.5 g
10.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
250 V
VGS(th)
VDS = VGS, ID = 250μA
2.5 5.0 V
IGSS VGS = 20V, VDS = 0V100 nA
IDSS VDS = VDSS, VGS = 0V
TJ = 125C
25 A
250 A
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
38 m
TO-268 (IXTT)
G
S
D (Tab)
TO-3P( IXTQ)
G
D
S
TO-264 (IXTK)
D (Tab)
G
DS
G = Gate
S = Source
D (Tab)
D = Drain
Tab = Drain
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2014 IXYS All Rights Reserved
DS99121F(7/14)

1 Page





IXTQ82N25P pdf, ピン配列
90
80
70
60
50
40
30
20
10
0
0.0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VDS - Volts
4.0
Fig. 3. Output Characteristics @ TJ = 125ºC
90
VGS = 10V
80 9V
70 8V
60
50 7V
40
30
6V
20
10 5V
0
012345678
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 41A Value vs.
Drain Current
3.8
3.4 VGS = 10V
3.0
2.6
TJ = 125ºC
2.2
1.8
1.4 TJ = 25ºC
1.0
0.6
0
20 40 60 80 100 120 140 160 180 200
ID - Amperes
IXTT82N25P IXTQ82N25P
IXTK82N25P
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
200 VGS = 10V
180
160
9V
140
120
100 8V
80
60
40 7V
20
0 6V
0 5 10 15 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 41A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2 I D = 82A
1.8
I D = 41A
1.4
1.0
0.6
0.2
-50
80
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
150
70 External Lead Current Limit
60
50
40
30
20
10
0
-50
-25
0 25 50 75 100 125 150
TC - Degrees Centigrade
© 2014 IXYS All Rights Reserved


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部品番号部品説明メーカ
IXTQ82N25P

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation
IXTQ82N25P

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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