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IXTK62N25 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK62N25
部品説明 High Current MegaMOS FET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK62N25 Datasheet, IXTK62N25 PDF,ピン配置, 機能
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 62N25
VDSS
ID25
RDS(on)
=
=
=
250 V
62 A
35 m
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
IIDAMR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250 V
250 V
±20 V
±30 V
62 A
248 A
62 A
45 mJ
1.5 J
5 V/ns
TO-264
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
390
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Low RDS
Rugged
(on) HDMOSTM process
polysilicon gate cell structure
International standard package
Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VPuGSlse=te1s0t,Vt,ID3=000.m5sID, 2d5uty cycle d 2%
Characteristic Values
Min. Typ.
Max.
250 V
2.0 4.0 V
±100 nA
50 µA
2 mA
35 m
Applications
Motor controls
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2003 IXYS All rights reserved
DS98877C(10/03)

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部品番号部品説明メーカ
IXTK62N25

High Current MegaMOS FET

IXYS Corporation
IXYS Corporation

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