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PDF IXTK62N25 Data sheet ( Hoja de datos )
| Número de pieza | IXTK62N25 | |
| Descripción | High Current MegaMOS FET | |
| Fabricantes | IXYS Corporation | |
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High Current
MegaMOSTMFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTK 62N25
VDSS
ID25
RDS(on)
=
=
=
250 V
62 A
35 mΩ
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
IIDAMR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
250 V
250 V
±20 V
±30 V
62 A
248 A
62 A
45 mJ
1.5 J
5 V/ns
TO-264
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
390
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•
•
Low RDS
Rugged
(on) HDMOSTM process
polysilicon gate cell structure
• International standard package
• Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VPuGSlse=te1s0t,Vt,≤ID3=000.m5sID, 2d5uty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
250 V
2.0 4.0 V
±100 nA
50 µA
2 mA
35 mΩ
Applications
• Motor controls
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS98877C(10/03)
1 page  
1.00
0.10
0.01
1
IXTK 62N25
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10 100
Puls e W idth - millis ec onds
1000
© 2003 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTK62N25.PDF ] | |
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