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PDF IXTK250N10 Data sheet ( Hoja de datos )
| Número de pieza | IXTK250N10 | |
| Descripción | High Current MegaMOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advance Technical Information
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 250N10
VDSS
ID25
RDS(on)
=
=
=
100 V
250 A
5 mΩ
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
T
C
= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
100
100
±20
±30
250
75
1000
90
80
4.0
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
730
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
V =0V
GS
TJ = 25°C
T = 125°C
J
R
DS(on)
V = 10 V, I = 90 A
GS D
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
100 V
2.0 4.0 V
±200 nA
50 µA
1 mA
5 mΩ
Applications
• Motor controls
• DC choppers
• Switched-mode power supplies
•DC-DC Converters
•Linear Regulators
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99022(03/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTK250N10.PDF ] | |
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