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PDF IXTH8P50 Data sheet ( Hoja de datos )
| Número de pieza | IXTH8P50 | |
| Descripción | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated | |
| Fabricantes | IXYS Corporation | |
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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 7P50
IXTH 8P50
V IR
DSS D25 DS(on)
-500V -7 A 1.5 Ω
-500V -8 A 1.2 Ω
Symbol
V
DSS
V
DGR
VGS
VGSM
ID25
I
DM
IAR
EAR
PD
T
J
T
JM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-500
-500
V
V
±20 V
±30 V
7P50
8P50
7P50
8P50
7P50
8P50
-7
-8
-28
-32
-7
-8
A
A
A
A
A
A
30 mJ
180 W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V
DSS
V
GS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
BVDSS Temperature Coefficient
VDS = VGS, ID = -250 µA
VGS(th) Temperature Coefficient
-500
0.054
V
%/K
-3.0 -5.0 V
-0.122
%/K
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
-200 µA
-1 mA
VGS = -10 V, ID = 0.5 ID25
7P50
8P50
RDS(on) Temperature Coefficient
1.5 Ω
1.2 Ω
0.6 %/K
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2001 IXYS All rights reserved
94534E (6/01)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTH8P50.PDF ] | |
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