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IXTH7P50 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH7P50
部品説明 Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTH7P50 Datasheet, IXTH7P50 PDF,ピン配置, 機能
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 7P50
IXTH 8P50
V IR
DSS D25 DS(on)
-500V -7 A 1.5
-500V -8 A 1.2
Symbol
V
DSS
V
DGR
VGS
VGSM
ID25
I
DM
IAR
EAR
PD
T
J
T
JM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-500
-500
V
V
±20 V
±30 V
7P50
8P50
7P50
8P50
7P50
8P50
-7
-8
-28
-32
-7
-8
A
A
A
A
A
A
30 mJ
180 W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard package
JEDEC TO-247 AD
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V
DSS
V
GS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = -250 µA
BVDSS Temperature Coefficient
VDS = VGS, ID = -250 µA
VGS(th) Temperature Coefficient
-500
0.054
V
%/K
-3.0 -5.0 V
-0.122
%/K
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
-200 µA
-1 mA
VGS = -10 V, ID = 0.5 ID25
7P50
8P50
RDS(on) Temperature Coefficient
1.5
1.2
0.6 %/K
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
© 2001 IXYS All rights reserved
94534E (6/01)

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IXTH7P50

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

IXYS Corporation
IXYS Corporation

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