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IXTH6N90 の電気的特性と機能

IXTH6N90のメーカーはIXYS Corporationです、この部品の機能は「Standard Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH6N90
部品説明 Standard Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTH6N90 Datasheet, IXTH6N90 PDF,ピン配置, 機能
Standard
Power MOSFET
IXTH / IXTM 6N90
IXTH / IXTM 6N90A
V
DSS
I
D25
R
DS(on)
900 V 6 A 1.8
900 V 6 A 1.4
N-Channel Enhancement Mode
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
M
d
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
900 V
900 V
±20 V
±30 V
6A
24 A
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
GS D D25
6N90
6N90A
Pulse test, t 300 µs, duty cycle d 2 %
900
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8
1.4
TO-247 AD (IXTH)
TO-204 AA (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91543E(5/96)
1-4

1 Page





IXTH6N90 pdf, ピン配列
Fig. 1 Output Characteristics
9
8
7 TJ = 25°C
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
7V
6V
25 30
VDS - Volts
Fig. 3 R vs. Drain Current
DS(on)
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 10V
2.2
VGS = 15V
2.0
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N90A
5
4 6N90
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXTH 6N90
IXTM 6N90
IXTH 6N90A
IXTM 6N90A
Fig. 2 Input Admittance
9
8
7
6
5
TJ = 25°C
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 2.5A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BVCES
1.1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4


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共有リンク

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部品番号部品説明メーカ
IXTH6N90

Standard Power MOSFET

IXYS Corporation
IXYS Corporation
IXTH6N90A

Standard Power MOSFET

IXYS Corporation
IXYS Corporation


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