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IXTH6N80 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH6N80
部品説明 N-Channel Enhancement Mode
メーカ ETC
ロゴ ETC ロゴ 



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IXTH6N80 Datasheet, IXTH6N80 PDF,ピン配置, 機能
Standard
Power MOSFET
N-Channel Enhancement Mode
VDSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
ID25
RDS(on)
6 A 1.8
6 A 1.4
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
P
D
TJ
T
JM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
800 V
800 V
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
6
24
180
-55 ... +150
150
-55 ... +150
A
A
W
°C
°C
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
VDSS
V
GS(th)
I
GSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 6N80
6N80A
Pulse test, t 300 µs, duty cycle d 2 %
800
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8
1.4
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Applications
q Switch-mode and resonant-mode
power supplies
q Motor controls
q Uninterruptible Power Supplies (UPS)
q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629

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