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IXTH6N80 の電気的特性と機能

IXTH6N80のメーカーはETCです、この部品の機能は「N-Channel Enhancement Mode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTH6N80
部品説明 N-Channel Enhancement Mode
メーカ ETC
ロゴ ETC ロゴ 




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IXTH6N80 Datasheet, IXTH6N80 PDF,ピン配置, 機能
Standard
Power MOSFET
N-Channel Enhancement Mode
VDSS
IXTH/IXTM 6 N80 800 V
IXTH/IXTM 6 N80A 800 V
ID25
RDS(on)
6 A 1.8
6 A 1.4
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
P
D
TJ
T
JM
Tstg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
800 V
800 V
±20 V
±30 V
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
6
24
180
-55 ... +150
150
-55 ... +150
A
A
W
°C
°C
°C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
Symbol
VDSS
V
GS(th)
I
GSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
V
DS
=
V,
GS
I
D
=
250
µA
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25 6N80
6N80A
Pulse test, t 300 µs, duty cycle d 2 %
800
2
V
4.5 V
±100 nA
250 µA
1 mA
1.8
1.4
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Applications
q Switch-mode and resonant-mode
power supplies
q Motor controls
q Uninterruptible Power Supplies (UPS)
q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
91542E(5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629

1 Page





IXTH6N80 pdf, ピン配列
IXTH 6N80
IXTM 6N80
IXTH6N80A
IXTM6N80A
Fig. 1 Output Characteristics
9
8
TJ = 25°C
7
6
5
4
3
2
1
0
0 5 10
VGS = 10V
15 20
VDS - Volts
7V
6V
25 30
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ = 25°C
2.8
2.6
2.4
VGS = 10V
2.2
2.0 VGS = 15V
1.8
0 2 4 6 8 10
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
7
6
6N80A
5
4 6N80
3
2
1
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Fig. 2 Input Admittance
9
8
7
6
5
TJ = 25°C
4
3
2
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 2.5A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BV CES
1.1
VGS(th)
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629


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共有リンク

Link :


部品番号部品説明メーカ
IXTH6N80

N-Channel Enhancement Mode

ETC
ETC
IXTH6N80

Power MOSFET ( Transistor )

IXYS
IXYS
IXTH6N80A

N-Channel Enhancement Mode

ETC
ETC
IXTH6N80A

Power MOSFET ( Transistor )

IXYS
IXYS


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