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PDF IXTH67N10 Data sheet ( Hoja de datos )
| Número de pieza | IXTH67N10 | |
| Descripción | MegaMOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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MegaMOSTMFET
IXTH / IXTM 67N10
IXTH / IXTM 75N10
N-Channel Enhancement Mode
V
DSS
100 V
100 V
I
D25
67 A
75 A
R
DS(on)
25 mΩ
20 mΩ
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGS
VGSM
ID25
IDM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
P
D
TJ
TJM
Tstg
Md
Weight
T
C
= 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
100 V
100 V
±20 V
±30 V
67N10
75N10
67N10
75N10
67 A
75 A
268 A
300 A
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
VDSS
VGS(th)
I
GSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
100
2
V
4V
±100 nA
200 µA
1 mA
0.025 Ω
0.020 Ω
TO-247 AD (IXTH)
TO-204 AE (IXTM)
D (TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l UninterruptiblePower Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91533E(5/96)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTH67N10.PDF ] | |
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