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PDF IXTH16P20 Data sheet ( Hoja de datos )
| Número de pieza | IXTH16P20 | |
| Descripción | Standard Power MOSFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 16P20
V
DSS
I
D25
RDS(on)
= -200 V
= -16 A
= 0.22 Ω
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
PD
T
J
T
JM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJ
TC = 25°C
TC = 25°C
TC = 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
-200
-200
V
V
±20 V
±30 V
-16 A
-64 A
-16 A
30 mJ
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (<5 nH)
- easy to drive and to protect
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = -250 µA
VDS = VGS, ID = -250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS
VGS = 0 V
VGS = -10 V, ID = 0.5 ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
-200
V
-3.0
TJ = 25°C
TJ = 125°C
-5.0 V
±100 nA
-25 µA
-1 mA
0.22 Ω
Applications
• High side switching
• Push-pull amplifiers
• DC choppers
• Automatic test equipment
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2002 IXYS All rights reserved
98906 (2/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTH16P20.PDF ] | |
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