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IXST35N120BのメーカーはIXYS Corporationです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | IXST35N120B |
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部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXST35N120Bダウンロード(pdfファイル)リンクがあります。 Total 2 pages
IGBT
IXSH 35N120B
IXST 35N120B
"S" Series - Improved SCSOA Capability
IC25
VCES
VCE(sat)
= 70 A
= 1200 V
= 3.6 V
Symbol
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
t
SC
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
1200
1200
±20
±30
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
70
35
140
VGE = 15 V, TJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 90
@ 0.8 VCES
TJ = 125°C, VCE = 720 V; VGE = 15 V, RG = 22 Ω
10
V
V
V
V
A
A
A
A
µs
PC TC = 25°C
TJ
TJM
Tstg
Md Mounting torque (TO-247)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
4g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 1.0 mA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 VCES
Note 1
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
1200
3
TJ = 25°C
TJ = 125°C
V
6V
50 µA
2.5 mA
±100 nA
3.6 V
2.9 V
TO-247 AD (IXSH)
G
C
E
TO-268 ( IXST)
(TAB)
G
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
l Epitaxial Silicon drift region
- fast switching
- small tail current
l MOS gate turn-on for drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
© 2002 IXYS All rights reserved
98669B (01/02)
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ IXST35N120B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IXST35N120B | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS Corporation |