|
|
IXST30N60CのメーカーはIXYS Corporationです、この部品の機能は「High Speed IGBT」です。 |
部品番号 | IXST30N60C |
| |
部品説明 | High Speed IGBT | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXST30N60Cダウンロード(pdfファイル)リンクがあります。 Total 4 pages
High Speed IGBT
Short Circuit SOA Capability
IXSH/IXST 30N60B
IXSH/IXST 30N60C
VCES
ICES
tfi
600 V 2.0 V 140 ns
600 V 2.5 V 70 ns
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 2.7 Ω
Clamped inductive load, VCC= 0.8 VCES
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 33 Ω, non repetitive
TC = 25°C
Mounting torque
(TO-247)
TO-247
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
600
±20
±30
55
30
110
ICM = 60
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
µs
200 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
300 °C
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
VGE = 15 V; IC = IC90
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
600
4
30N60B
30N60C
V
7V
100 µA
1 mA
±100 nA
2.0 V
2.5 V
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
G
S
(TAB)
G = Gate
S = Source
TAB = Drain
Features
l International standard packages
l Short Circuit SOA capability
l High frequency IGBT
l New generation HDMOSTM process
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Surface mountable, high power case
style
l Reduce assembly time and cost
l High power density
© 2001 IXYS All rights reserved
98519B (11/01)
1 Page Fig.1 Saturation Characteristics
100
TJ = 25°C
80
VGE = 15V
13V
11V
60
40
20
0
0
9V
7V
1234
VCE - Volts
5
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
120
100
TJ = 125°C
VGS=15V
13V
80
11V
60
40 9V
20
7V
0
0 2 4 6 8 10
VCE - Volts
Fig.5 Input Admittance
140
VCE = 10V
120
100
80
60
40 TJ = 125°C
20 TJ = 25°C
0
4 6 8 10 12 14 16
VGE - Volts
© 2001 IXYS All rights reserved
IXSH/IXST 30N60B
IXSH/IXST 30N60C
Fig.2 Output Characterstics
200
TJ = 25°C VGE = 15V
13V
160
120
11V
9V
80
7V
40
5V
0
0 2 4 6 8 10
VCE - Volts
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.6
VGE = 15V
1.4
IC = 60A
1.2
IC = 30A
1.0
IC = 15A
0.8
0.6
25
50 75 100 125
TJ - Degrees C
150
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
10000
f = 1Mhz
1000
Ciss
Coss
100
10
0
Crss
5 10 15 20 25 30 35 40
VCE-Volts
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ IXST30N60C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IXST30N60B | High Speed IGBT | IXYS Corporation |
IXST30N60B2D1 | High Speed IGBT with Diode | IXYS |
IXST30N60BD1 | High Speed IGBT | IXYS Corporation |
IXST30N60C | High Speed IGBT | IXYS Corporation |