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IXSK35N120BD1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSK35N120BD1
部品説明 HIGH VOLTAGE IGBT WITH DIODE
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXSK35N120BD1 Datasheet, IXSK35N120BD1 PDF,ピン配置, 機能
High Voltage
IGBT with Diode
Short Circuit SOA Capability
IXSK 35N120BD1
IXSX 35N120BD1
VCES = 1200 V
IC25 = 70 A
VCE(SAT) = 3.6 V
Preliminary data sheet
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 5 W
Clamped inductive load
VGE = 15 V, VCE = 720 V, TJ = 125°C
RG = 5 W, non repetitive
TC = 25°C
IGBT
Diode
1.6 mm (0.063 in) from case for 10 s
TO-264
PLUS247
Maximum Ratings
1200
1200
±20
±30
70
35
140
ICM = 90
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
ms
300
190
-55 ... +150
150
-55 ... +150
300
10
6
W
W
°C
°C
°C
°C
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
ICES

IGES
VCE(sat)
IC = 3 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
1200
3
TJ = 125°C
V
6V
1 mA
3 mA
±100 nA
3.6 V
 Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
TO-264 AA
(IXSK)
G
C
E
PLUS TO-247TM
(IXSX)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• Hole-less TO-247 package for clip
mounting
• High frequency IGBT and anti-parallel
FRED in one package
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
98733 (7/00)

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IXSK35N120BD1

HIGH VOLTAGE IGBT WITH DIODE

IXYS Corporation
IXYS Corporation

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