|
|
PDF IXSK35N120BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXSK35N120BD1 | |
| Descripción | HIGH VOLTAGE IGBT WITH DIODE | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXSK35N120BD1 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
High Voltage
IGBT with Diode
Short Circuit SOA Capability
IXSK 35N120BD1
IXSX 35N120BD1
VCES = 1200 V
IC25 = 70 A
VCE(SAT) = 3.6 V
Preliminary data sheet
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 5 W
Clamped inductive load
VGE = 15 V, VCE = 720 V, TJ = 125°C
RG = 5 W, non repetitive
TC = 25°C
IGBT
Diode
1.6 mm (0.063 in) from case for 10 s
TO-264
PLUS247
Maximum Ratings
1200
1200
±20
±30
70
35
140
ICM = 90
@ 0.8 VCES
10
V
V
V
V
A
A
A
A
ms
300
190
-55 ... +150
150
-55 ... +150
300
10
6
W
W
°C
°C
°C
°C
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC = 3 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
1200
3
TJ = 125°C
V
6V
1 mA
3 mA
±100 nA
3.6 V
Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
TO-264 AA
(IXSK)
G
C
E
PLUS TO-247TM
(IXSX)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
Hole-less TO-247 package for clip
mounting
High frequency IGBT and anti-parallel
FRED in one package
Low VCE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
Reduces assembly time and cost
High power density
98733 (7/00)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXSK35N120BD1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXSK35N120BD1 | HIGH VOLTAGE IGBT WITH DIODE | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |