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PDF IXGN200N60B Data sheet ( Hoja de datos )
| Número de pieza | IXGN200N60B | |
| Descripción | HiPerFASTTM IGBT | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFASTTM IGBT
IXGN 200N60B
VCES
IC25
VCE(sat)
= 600 V
= 200 A
= 2.1 V
E
Symbol
Test Conditions
VCES
V
CGR
TJ
T
J
VGES
VGEM
I
C25
IC90
I
CM
SSOA
(RBSOA)
= 25°C to 150°C
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
T
C
= 25°C
TC = 90°C
T
C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 2.4 W
Clamped inductive load, L = 30 mH
PC
TJ
T
JM
Tstg
VISOL
Md
TC = 25°C
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
Maximum Ratings
600 V
600 V
±20 V
±30 V
200 A
120 A
400 A
ICM = 200
@ 0.8 V
CES
600
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
BV
CES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
I = 1 mA , V = 0 V
C GE
IC = 1 mA, VCE = VGE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T=
J
25°C
TJ = 125°C
600
2.5
V
5.5 V
200 mA
2 mA
±400 nA
2.1 V
SOT-227B, miniBLOC
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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