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PDF IXGH32N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH32N60BD1 | |
| Descripción | HiPerFAST IGBTwith Diode | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
with Diode
IXGH 32N60BD1
IXGT 32N60BD1
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 60 A
= 2.3 V
= 85 ns
Symbol
Test Conditions
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 100 µH
PC TC = 25°C
T
J
TJM
T
stg
Md Mounting torque (M3) TO-247AD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247AD
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
60 A
32 A
120 A
ICM = 64
@ 0.8 VCES
200
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
6g
4g
Symbol
BVCES
V
GE(th)
ICES
IGES
V
CE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 150°C
600
2.5
V
5.0 V
200 µA
3 mA
±100 nA
2.3 V
TO-268
(IXGT)
G
E
TO-247 AD
(IXGH)
C
(TAB)
G
CE
C
(TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
• Internationalstandardpackages
• High frequency IGBT and antiparallel
FRED in one package
• Highcurrenthandlingcapability
• HiPerFASTTM HDMOSTM process
• MOS Gate turn-on
-drive simplicity
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitableforsurfacemounting
• Very low switching losses for high
frequency applications
• Easy to mount with 1 screw,TO-247
(insulated mountingscrewhole)
© 2002 IXYS All rights reserved
98749B (03/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXGH32N60BD1.PDF ] | |
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