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Número de pieza | IXGH30N60BD1 | |
Descripción | HiPerFASTTM IGBT with Diode | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! HiPerFASTTM IGBT
with Diode
IXGH 30N60BD1 VCES = 600 V
IXGT 30N60BD1 IC25 = 60 A
=VCE(sat) 1.8 V
tfi(typ) = 100 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
PC TC = 25°C
T
J
TJM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque, TO-247 AD
TO-247 AD
TO-268
600
600
±20
±30
60
30
120
ICM = 60
@ 0.8 VCES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
• Moderate frequency IGBT and
antiparallel FRED in one package
• High current handling capability
• Newest generation HDMOSTM
process
• MOS Gate turn-on
- drive simplicity
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
I
C
=
250mA,
V
GE
=
0
V
IC = 250 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 150°C
600
2.5
V
5.0 V
200 mA
3 mA
±100 nA
1.8 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Optimized Vce(sat) and switching
speeds for medium frequency
application
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98510C (7/00)
1-5
1 page TVJ=150°C
TVJ=100°C
TVJ=25°C
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
IXGH 30N60BD1
IXGT 30N60BD1
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Fig. 12 Forward current I versus V
FF
IRM
Qr
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
TVJ=100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
Fig. 14 Peak reverse current I
RM
versus -diF/dt
TVJ= 100°C
IF = 30A
tfr
VFR
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
Fig. 16 Recovery time trr versus -diF/dt
Fig. 17 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
3 0.205
0.0052
0.0003
0.0162
Fig. 18 Transient thermal resistance junction to case
© 2000 IXYS All rights reserved
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXGH30N60BD1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXGH30N60BD1 | HiPerFASTTM IGBT with Diode | IXYS Corporation |
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