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IXGH17N100U1 の電気的特性と機能

IXGH17N100U1のメーカーはIXYS Corporationです、この部品の機能は「Low VCE(sat) IGBT with Diode High speed IGBT with Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGH17N100U1
部品説明 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXGH17N100U1 Datasheet, IXGH17N100U1 PDF,ピン配置, 機能
Low VCE(sat) IGBT with Diode
High speed IGBT with Diode
Combi Packs
IXGH 17 N100U1
IXGH 17 N100AU1
VCES
1000 V
1000 V
IC25
34 A
34 A
VCE(sat)
3.5 V
4.0 V
Symbol
Test Conditions
Maximum Ratings TO-247 AD
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 82
Clamped inductive load, L = 100 µH
PC
TJ
TJM
Tstg
Md
Weight
TC = 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
1000
1000
V
V
±20 V
±30 V
34 A
17 A
68 A
ICM = 34
@ 0.8 V
CES
150
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
package
l 2nd generation HDMOSTM process
l Low V
CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol
BVCES
V
GE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 4.5 mA, VGE = 0 V
I
C
=
500
µA,
V
CE
=
V
GE
V = 0.8 • V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
T
J
=
25°C
TJ = 125°C
1000
2.5
17N100U1
17N100AU1
V
5.5 V
500 µA
8 mA
±100 nA
3.5 V
4.0 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Saves space (two devices in one
package)
l Easy to mount (isolated mounting
screw hole)
l Reduces assembly time and cost
© 1996 IXYS All rights reserved
91754D (3/96)

1 Page





IXGH17N100U1 pdf, ピン配列
IXGH 17N100U1
IXGH 17N100AU1
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
35
TJ = 25°C
30
25
VGE = 15V
13V
11V
9V
20
15
7V
10
5
0
01234567
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
150
TJ = 25°C
125
100
VGE = 15V
13V
75 11V
50
9V
25
7V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
10
9 TJ = 25°C
8
7
6
5 IC = 34A
4 IC = 17A
3
IC = 8.5A
2
1
0
5 6 7 8 9 10 11 12 13 14 15
1.4
IC = 34A
1.3
1.2
1.1
1.0 IC = 17A
0.9
0.8 IC = 8.5A
0.7
0.6
-50 -25 0 25 50 75 100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
35
VCE= 10V
30
25
20
15
TJ = 25°C
10
5 TJ = 125°C
TJ = - 40°C
0
0 1 2 3 4 5 6 7 8 9 10
VCE - Volts
17N100G1 JNB
1.2 VGE(th)
1.1 IC = 250µA
1.0
0.9 BVCES
IC = 3mA
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
© 1996 IXYS All rights reserved


3Pages


IXGH17N100U1 電子部品, 半導体
IXGH 17N100U1
IXGH 17N100AU1
Fig.17 Diode Transient Thermal resistance junction to case
1.00
0.10
0.01
0.001
0.01
Pulse Width - Seconds
0.1
1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

6 Page



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部品番号部品説明メーカ
IXGH17N100U1

Low VCE(sat) IGBT with Diode High speed IGBT with Diode

IXYS Corporation
IXYS Corporation


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