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PDF IXFX34N80 Data sheet ( Hoja de datos )
| Número de pieza | IXFX34N80 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
IXFK 34N80
IXFX 34N80
V = 800 V
DSS
ID25 = 34 A
=RDS(on) 0.24 W
trr £ 250 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
800 V
800 V
±20 V
±30 V
34 A
136 A
36 A
64 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.9/6 Nm/lb.in.
6g
10 g
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
800 V
3.0 5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
0.24 W
PLUS 247TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98560B (6/99)
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| PDF Descargar | [ Datasheet IXFX34N80.PDF ] | |
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