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PDF IXFX120N20 Data sheet ( Hoja de datos )
| Número de pieza | IXFX120N20 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Single MOSFET Die
Preliminary data sheet
IXFX 120N20
IXFK 120N20
VDSS =
ID25 =
=RDS(on)
200 V
120 A
17 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID104
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
200 V
200 V
±20 V
±30 V
120 A
76 A
480 A
120 A
64 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.9/6 Nm/lb.in.
6g
10 g
PLUS 247TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3mA
V = V , I = 8mA
DS GS D
V
GS
=
±20
V,
V
DS
=
0
VDS = VDSS
V =0V
GS
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200 V
2.0 4.0 V
±200 nA
TJ = 25°C
T
J
= 125°C
100 mA
2 mA
17 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXFX120N20.PDF ] | |
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