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PDF IXFT9N80Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT9N80Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | ETC | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q
IXFT 9N80Q
VDSS
I
D25
RDS(on)
= 800 V
= 9A
= 1.1 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
TL
Md
Weight
Symbol
VDSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C,
pulse width limited by TJM
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
800 V
800 V
±20 V
±30 V
9A
36 A
9A
20 mJ
700 mJ
5 V/ns
180
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
VGS = 0 V, ID = 1 mA
V = V , I = 2.5 mA
DS GS D
VGS = ±20 VDC, VDS = 0
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800 V
3.0 5.0 V
±100 nA
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l IXYS advanced low Q process
g
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Unclamped Inductive Switching (UIS)
rated
l Molding epoxies meet UL 94 V-0
flammability classification
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
50 µA
1 mA
1.1 Ω
Advantages
l Easy to mount
l Space savings
l High power density
© 1999 IXYS All rights reserved
98629 (6/99)
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