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PDF IXFT6N100F Data sheet ( Hoja de datos )
| Número de pieza | IXFT6N100F | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
High dV/dt, Low trr
Low
Qg,
Low
Intrinsic
Rg
IXFH 6N100F
IXFT 6N100F
VDSS
ID25
RDS(on)
= 1000 V
= 6A
= 1.9 Ω
t
rr
≤
250
ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
TO-247 AD (IXFH)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
1000
1000
±20
±30
6
24
6
20
500
15
V
V
V
V
A
A
A
mJ
mJ
V/ns
180 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
VGS = 0 V, ID = 500uA
VDS = VGS, ID = 2.5 mA
VGS = ±20 V, VDS = 0
V =V
DS DSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
1000
V
3.0 5.5 V
±100 nA
TJ = 125°C
50 µA
1 mA
1.9 Ω
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
● RF capable MOSFETs
● Double metal process for low gate
resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS)
rated
● Low package inductance
- easy to drive and to protect
● Fast intrinsic rectifier
Applications
● DC-DC converters
● Switched-mode and resonant-mode
power supplies, >500kHz switching
● DC choppers
● 13.5 MHz industrial applications
● Pulse generation
● Laser drivers
● RF amplifiers
Advantages
● Space savings
● High power density
© 2002 IXYS All rights reserved
98732B (9/02)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT6N100F.PDF ] | |
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